VS-ST780CL series www.vishay.com vishay semiconductors revision: 15-apr-14 1 document number: 94415 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 phase control thyristors (hockey puk version), 1350 a features ? center amplifying gate ? metal case with ceramic insulator ? international standard case to-200ac (b-puk) ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary package to-200ac (b-puk) diode variation single scr i t(av) 1350 a v drm /v rrm 400 v, 600 v v tm 1.31 v i gt 100 ma t j -40 c to 125 c to-200ac (b-puk) major ratings and characteristics parameter test conditions values units i t(av) 1350 a t hs 55 c i t(rms) 2700 a t hs 25 c i tsm 50 hz 24 400 a 60 hz 25 600 i 2 t 50 hz 2986 ka 2 s 60 hz 2726 v drm /v rrm 400 to 600 v t q typical 150 s t j v -40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma vs-st780c..l 04 400 500 80 06 600 700
VS-ST780CL series www.vishay.com vishay semiconductors revision: 15-apr-14 2 document number: 94415 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at heatsink temperature i t(av) 180 conduction, half sine wave double side (single side) cooled 1350 (500) a 55 (85) c maximum rms on-state current i t(rms) dc at 25 c heatsink tem perature double side cooled 2700 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 24 400 t = 8.3 ms 25 600 t = 10 ms 100 % v rrm reapplied 20 550 t = 8.3 ms 21 500 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 2986 ka 2 s t = 8.3 ms 2726 t = 10 ms 100 % v rrm reapplied 2112 t = 8.3 ms 1928 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 29 860 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.80 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 0.90 low level value of on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.14 m high level value of on-state slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.13 maximum on-state voltage v tm i pk = 3600 a, t j = t j maximum, t p = 10 ms sine pulse 1.31 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma typical latching current i l 1000 switching parameter symbol test conditions values units maximum non-repetitive rate of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 750 a, t j = t j maximum, di/dt = 60 a/s, v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 , t p = 500 s 150 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 80 ma
VS-ST780CL series www.vishay.com vishay semiconductors revision: 15-apr-14 3 document number: 94415 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p 5 ms 10.0 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum peak positive gate voltage + v gm t j = t j maximum, t p 5 ms 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = -40 c maximum required gate trigger/current/voltage are the lowest value which will trigger all units 12 v anode to cathode applied 200 - ma t j = 25 c 100 200 t j = 125 c 50 - dc gate voltage required to trigger v gt t j = -40 c 2.5 - v t j = 25 c 1.8 3.0 t j = 125 c 1.1 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j -40 to 125 c maximum storage temperature range t stg -40 to 150 maximum thermal resistanc e, junction to heatsink r thj-hs dc operation single side cooled 0.073 k/w dc operation double side cooled 0.031 maximum thermal resist ance, case to heatsink r thc-hs dc operation single side cooled 0.011 dc operation double side cooled 0.006 mounting force, 10 % 14 700 (1500) n (kg) approximate weight 255 g case style see dimensions - link at the end of datasheet to-200ac (b-puk) r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.009 0.009 0.006 0.006 t j = t j maximum k/w 120 0.011 0.011 0.011 0.011 90 0.014 0.014 0.015 0.015 60 0.020 0.020 0.021 0.021 30 0.036 0.036 0.036 0.036
VS-ST780CL series www.vishay.com vishay semiconductors revision: 15-apr-14 4 document number: 94415 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ra tings characteristics fig. 2 - current ra tings characteristics fig. 3 - current ra tings characteristics fig. 4 - current ra tings characteristics fig. 5 - on-state powe r loss characteristics fig. 6 - on-state powe r loss characteristics 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st7 8 0 c . . l se r i e s (single side cooled) r (dc) = 0.073 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 1400 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c) st7 8 0 c . . l se r i e s (single side cooled) r (dc) = 0.073 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 400 800 120016002000 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st780c..l se rie s (double side cooled) r (dc) = 0.031 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 3000 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c) st7 8 0 c . . l se r i e s (double side cooled) r (dc) = 0.031 k/ w thj-hs 0 500 1000 1500 2000 2500 0 400 800 1200 1600 2000 180 120 90 60 30 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) st780c..l se rie s t = 125c j 0 500 1000 1500 2000 2500 3000 3500 0 500 1000 1500 2000 2500 3000 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) st780c..l se rie s t = 125c j
VS-ST780CL series www.vishay.com vishay semiconductors revision: 15-apr-14 5 document number: 94415 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - maximum non-re petitive surge current single and double side cooled fig. 8 - maximum non-re petitive surge current single and doub le side cooled fig. 9 - on-state volt age drop characteristics fig. 10 - thermal impedance z thj-hs characteristics 10000 12000 14000 16000 18000 20000 22000 110100 number of equal amplitude half cyc le current pulses (n) pea k half sine wave on-st ate current (a) init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st7 8 0 c . . l se r i e s at any ra t ed loa d co nd it io n and wit h rated v applied following surge. rrm 10000 12000 14000 16000 18000 20000 22000 24000 26000 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control peak ha lf sine wa ve on-sta te current (a) init ia l t = 125c no voltage reapplied ra t e d v re a p p l i e d rrm j st7 8 0 c . . l se r i e s maximum non repetitive surge current of conduction may not be maintained. 100 1000 10000 0.5 1 1.5 2 2.5 t = 2 5 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 1 2 5 c j st7 8 0 c . . l se r i e s 0.001 0.01 0.1 0.001 0.01 0.1 1 10 sq u a r e w a v e pu l se d u r a t i o n ( s) thj-hs steady state value r = 0.073 k/ w (single side cooled) r = 0.031 k/ w (double side cooled) (dc operation) thj-hs thj-hs st7 8 0 c . . l se r i e s transient thermal impedance z (k/w)
VS-ST780CL series www.vishay.com vishay semiconductors revision: 15-apr-14 6 document number: 94415 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) t j=25 c tj = 1 2 5 c tj = - 4 0 c (2) (3) instantaneous gate current (a) inst a nt a ne o us ga t e vo lt a g e ( v) a) recommended load line for b) recommended load line for <=30% ra ted d i/ d t : 10v, 10ohms frequenc y limited by pg(av) rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms rectangular gate pulse de vic e : st780c..l series (4) device code 5 1 3 2 4 6 7 8 9 vs- st 78 0 c 06 l 1 - - thyristor 2 - essential part number 3 - 0 = converter grade 4 - c = ceramic puk 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - l = puk case to-200ac (b-puk) 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 9 8 - critical dv/dt: none = 500 v/s (standard selection) l = 1000 v/s (special selection) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 1 - vishay semiconductors product links to related documents dimensions http://www.vis hay.com/doc?95076
document number: 95076 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-aug-07 1 to-200ac (b-puk) outline dimensions vishay semiconductors dimensions in millimeters (inches) pin receptacle amp. 60598-1 0.7 (0.03) min. 34 (1.34) dia. max. 2 places 53 (2.09) dia. max. 58.5 (2.3) dia. max. 2 holes dia. 3.5 (0.14) x 2.5 (0.1) deep 4.7 (0.18) 27 (1.06) max. 0.7 (0.03) min. 6.2 (0.24) min. 36.5 (1.44) creepage distance: 36.33 (1.430) minimum strike distance: 17.43 (0.686) minimum quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) 20 5
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